Datasheets - MOSFET Single Transistors Nexperia
Subsection: "MOSFET Single Transistors"
Manufacturer: "Nexperia"
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BSP122 BUK7M3R3-40H BUK7S0R5-40H BUK7V4R2-40H BUK9M3R3-40H BUK9V13-40H GAN063-650WSA PHK12NQ03LT PMF170XP PMN50XP PMV20EN PMV60EN PSMN0R9-25YLC PSMN0R9-30ULD PSMN1R0-40ULD PSMN3R7-100BSE PSMNR55-40SSH SI2302DSSearch results: 18 Output: 1-18
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N-channel TrenchMOS logic level FET Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and ...
20 V, 1 A P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using ...- N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and ...
P-channel TrenchMOS extremely low level FET
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed ...- Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been ...
- 30 V, N-channel Trench MOSFET
N-channel TrenchMOS logic level FET
N-channel vertical D-MOS logic level FET
650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...- Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
- Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
- Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low R DSon and a very strong linear-mode (SOA) performance.
- SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150В °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed ...
- SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique 'њSchottkyPlus'ќ technology delivers ...
- N-channel TrenchMOS logic level FET
- N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
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