Datasheets ON Semiconductor - 6
Manufacturer: "ON Semiconductor"
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- Diodes - Rectifiers Single ON Semiconductor MBR340 MBR340G
Schottky Diodes & Rectifiers ON Semiconductor MBR340Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ... - Schottky Power Rectifier, Surface Mount, 3.0 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
- Quad 2-Input NOR Gate The MC74VHC02 is an advanced high speed CMOS 2-input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power ...
- TinyLogic ULP-A D-Type Flip-Flop with Preset and Clear The NC7SV74 is a single D-type CMOS Flip-Flop with preset and clear from ON Semiconductor's Ultra Low Power-A (ULP-A) Series of TinyLogic in both the space saving US8 and MicroPak packages. ...
- N-Channel UltraFET Power MOSFET 100V, 75A, 8mΩ
- N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state ...
- Digital Potentiometer (POT), 32-Tap, with Buffered Wiper The CAT5112 is a single digital POT designed as an electronic replacement for mechanical potentiometers. Ideal for automated adjustments on high volume production lines, they are also well ...
- NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
- NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
- NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
- NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
- NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
- NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
- Zener Voltage Regulators 200 mW SOD−323 Surface Mount This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are ...
- TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device ...
- 50 V Dual Common Cathode Switching Diode The Common Cathode Switching Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-23 package, which is designed for low power surface mount applications.
- 1.0 A, 20 V, Schottky Power Rectifier, Surface Mount The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced ...
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