Datasheets STMicroelectronics - 7
Manufacturer: "STMicroelectronics"
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- Automotive dual-line TVS in DFN for CAN bus protection All features AEC-Q101 qualified Dual-line ESD and EOS protection Triggering voltage, V TRIG min = 28 V QFN-3L 1.1 x 1.0 x 0.55 package also called DFN1110 Bidirectional device Max pulse power ...
- MEMS digital output motion sensor: high-performance 3-axis accelerometer for automobile applications All features AEC-Q100 qualified ±2g/±4g/±8g/±16g dynamically selectable full scales Low power consumption down to 110 µA in high-performance mode ...
- High power density 600V half-bridge driver with two enhancement mode GaN HEMT All features 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R DS(ON) = 225 mΩ I DS(MAX) ...
- 38 V, 1.5 A synchronous step-down converter with low quiescent current All features 3.5 V to 38 V operating input voltage Output voltage from 0.85 V to V IN 1.5 A DC output current Internal compensation network Two different versions: LCM for high ...
- Silicon NPN Transistors The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrialline-operated applications.
- Silicon NPN Transistors The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrialline-operated applications.
- Mainstream Value line 8-bit MCU with 8 Kbytes Flash, 16 MHz CPU, integrated EEPROM All features Core 16 MHz advanced STM8 core with Harvard architecture and 3-stage pipeline Extended instruction set Memories Program memory: 8 Kbyte Flash memory; ...
- N-channel 1500 V, 5 Ohm typ., 4 A PowerMESH Power MOSFET in a TO-220 package All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF ...
- N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-3PF All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF plastic ...
- N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247 All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF plastic ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- High bandwidth (22MHz) Low offset (200µV) 5V Op amp All features Gain bandwidth product 22 MHz, unity gain stable High accuracy input offset voltage: 50 µV typ., 200 µV max. Low input bias current: 2 pA typ. Low input voltage noise density: 7 ...
- 16-bit isolated Sigma-Delta modulator, single-ended and LVDS interfaces All features Up to 25 MHz external clock input for easier synchronization ±320 mV full scale analog input range 16-bit resolution, no missing codes 13-bit typical ENOB 86 dB ...
- N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET All features TYPICAL R DS (on) = 0.020Ω 100% AVALANCHE TESTED EXCEPTIONAL dv/dt CAPABILITY SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE REEL (SUFFIX “T4\) THROUGH-HOLE IPAK ...
- N-Channel 60V - 0.022Ω - 35A DPAK/IPAK STripFET Power MOSFET
- N-channel 60 V, 0.022 Ohm typ., 35 A STripFET II Power MOSFET in a DPAK package All features Low threshold drive Gate charge minimized
- Automotive-grade N-channel 60 V, 22 mOhm typ., 35 A STripFET II Power MOSFET in a DPAK package All features AEC-Q101 qualified Low threshold drive Gate charge minimized
- High voltage, precision, bidirectional current sense amplifier All features Wide common mode voltage: - 20 to 70 V Offset voltage: ± 200 µV max 2.7 to 5.5 V supply voltage Different gain available TSC2010: 20 V/V TSC2011: 60 V/V TSC2012: 100 V/V ...
- High voltage, precision, bidirectional current sense amplifier All features Wide common mode voltage: - 20 to 70 V Offset voltage: ± 200 µV max 2.7 to 5.5 V supply voltage Different gain available TSC2010: 20 V/V TSC2011: 60 V/V TSC2012: 100 V/V ...
- High voltage, precision, bidirectional current sense amplifier All features Wide common mode voltage: - 20 to 70 V Offset voltage: ± 200 µV max 2.7 to 5.5 V supply voltage Different gain available TSC2010: 20 V/V TSC2011: 60 V/V TSC2012: 100 V/V ...
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