NXP Semiconductors released its new LFPAK33 portfolio – a range of high switching performance MOSFETs available in an ultra-reliable 3.3-mm × 3.3-mm power package. Unlike many MOSFET packages of this size, LFPAK33 has been designed from the ground up to be a tough power solution. Incorporating copper clip and solder die attach technologies, it features a market-leading junction temperature of 175 degrees Celsius. Nine LFPAK33 power MOSFET types are available immediately.
As electronic devices become ever smaller, components need to shrink to fit the available space and MOSFETs are expected to work under extreme thermal and mechanical conditions. Continuously switching many tens of amps at high temperatures can cause solder joint failure or crack the package case. LFPAK33 minimizes the risk of this type of damage through its unique construction which allows the exposed SOURCE and GATE pins to “flex” and safely absorb thermally- and mechanically-induced stresses.
LFPAK33 is fully compatible with QFN and DFN3333 packages – both in terms of PCB footprint and automated vision inspection.
Key Features
- Unique rugged construction, specifically designed for space-constrained power applications
- No wire bonds, best-in-class thermal performance, up to 175°C
- Uniquely resilient to mechanical and thermal stresses
- Exposed leads means improved optical inspection of solder joints
- Low 0.85-mm package height
- Footprint compatible with QFN3333 / DFN3333
- Proven track record from LFPAK56 – “The Toughest Power SO-8”
- NextPower SuperJunction MOSFET technology
NXP LFPAK33 power MOSFET portfolio:
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Divice
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VDS
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RDS(ON)
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Drive Level
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25V
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2.8 mΩ
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Logic
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30V
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2.95 mΩ
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Logic
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30V
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3.15 mΩ
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Logic
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25V
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4.15 mΩ
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Logic
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30V
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4.65 mΩ
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Logic
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30V
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7 mΩ
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Logic
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25V
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8.65 mΩ
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Logic
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30V
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9.8 mΩ
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Logic
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30V
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13.6 mΩ
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Logic
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