Next-generation Zero-Threshold Voltage EPAD™ design enables circuits with greater operating range in low voltage supply environments
Advanced Linear Devices Inc (ALD) announced an industry breakthrough in small signal, precision matched, low power MOSFETs by enabling independent control of each device within a quad package. This innovative capability will provide circuit designers with unprecedented flexibility in developing next-generation energy harvesting systems and low-power mobile devices.
The ALD210800A/ALD210800 Precision N-Channel MOSFET arrays featuring Zero-Threshold™ Voltage establish new industry benchmarks for forward transconductance and output conductance. Designed with ALD's proven EPAD™ CMOS technology, the arrays allow circuit designers to build ultra-low supply voltages that were never before possible.
The game-changing capabilities of the devices are enabled by the following unique features:
- Zero Gate Threshold Voltage VGS(TH) set precisely at +0.00V ±0.01V
- VOS (VGS(TH) match) to 2mV / 10mV max
- Sub-threshold voltage or nano-power operations
- The precision parameters of the device enable revolutionary abilities:
- <100 mV Min. operating voltage
- <1nA Min. operating current
- <1nW Min. operating power
Circuit Design Impact
The independent control of each device in the package will transform circuit design by enabling each MOSFET to be characterized with different input and output requirements. This further reduces size and weight in systems by shrinking the footprint of discrete MOSFET circuits up to 50 percent, significantly decreasing circuit board real estate, complexity, cost and time-to-market.
ALD210800A/ALD210800 Precision N-Channel MOSFET arrays can help designers reduce the number of batteries required for mobile devices. The game-changing flexibility of the devices is also suited for improving energy efficiency and battery life in medical devices, boosting audio quality in premium headphones and consumer devices, extending the operating range for energy harvesting systems, enhancing sensitivity in sensor arrays and many other ultra-low voltage and power applications.
The ALD210800A/ALD210800 MOSFET arrays are designed to empower designers to build circuits with multiple cascading stages that operate at extremely low supply/bias voltage levels. It's now possible to build a nanopower input amplifier stage operating at a <0.2V supply voltage – a new industry achievement.
Technology Features
As an enhanced addition to the family of ALD110800A/ALD110800 EPAD™ Matched Pair MOSFETs, the new ALD210800A/ALD210800 arrays feature the industry's first Zero-Threshold™ voltage to enable circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges in ultra-low operating voltage environments. The MOSFETs are designed for exceptional device electrical characteristics matching with the Gate Threshold Voltage VGS(TH) set precisely at +0.00V ± 0.01V, IDS = +10µA @ VDS = 0.1V, featuring a typical offset voltage of only ±0.001V (1mV).
Additionally, the ALD210800A/ALD210800 MOSFETs are intended as versatile design components for a broad range of analog applications such as current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers. They also excel in limited operating voltage applications such as very low level voltage-clamps and normally-on nanopower circuits.
Each individual MOSFET also exhibits tightly controlled manufacturing characteristics, delivering precise design limits from different production batches. They are built for minimum offset voltage and differential thermal response, and they can be used for switching and amplifying applications in +0.1V to +10V (±0.05V to ±5V) powered systems requiring low input bias current, low input capacitance, and fast switching speed. At VGS > 0.00V, the device exhibits enhancement mode characteristics. At VGS <0.00V the device operates in depletion mode.
