NXP further enlarges its ESD protection portfolio by releasing the first two of four new ultra low capacitance unidirectional double ESD protection diodes in very small, leadless DFN1006-3 and DFN1006B-3 packages. PESD5V0X2UM and PESD5V0X2UMB are designed to protect up to two signal lines from damage caused by ESD and other transients.
Housed in ultra small packages of 1.0 × 0.6 mm2 with package heights of only 0.48 and 0.37 mm, these devices are especially designed for space constrained applications. They offer an ultra low capacitance down to Cd = 0.5 pF together with an ESD robustness up to VESD = 10 kV and a peak pulse current of 1.5 A. Additionally, both protection diodes are AEC-Q101 qualified.
Key features and benefits
- Ultra low diode capacitance: Cd = 0.50 pF
- Ultra low package height of only 0.37 mm
- ESD protection up to 10 kV; IEC61000-4-2
- IPPM = 1.5 A; IEC 61643-321 (surge)
- AEC-Q101 qualified
Key applications
- High-speed data lines such as USB2.0, USB2.0/3.0 combi port
- Portable devices
- Communication systems
- Computers and peripherals
