Infineon's new PTVA104501EH LDMOS transistor is designed to provide 450 W output power across the 960-1215 MHz avionics frequency band (measured with 128 µsec, 10% DC pulse). It offers high gain of 17 dB and 57% efficiency.
PTVA104501EH is aimed at commercial avionics and RADAR applications and complements Infineon's higher power 900 W (P1dB) PTVA101K02EV transistor.
Infineon's 50 V LDMOS designs offer outstanding ruggedness. PTVA104501EH is capable of withstanding a 10:1 load mismatch at all phase angles at 450 W output power. Input/output matching ensures easy integration into amplifier designs. A compact broadband reference circuit is also available.
In addition, Infineon offers the following three low-power transistors, which can be used as drivers to complete any design: 12 W (PTVA030121EA V1), 25 W (PTVA120251EA V1) and 50 W (PTVA120501EA V1).
Features
- Broadband operation:960 to 1215 MHz
- I/O matched for easy integration
- 288-style flanging, open cavity package
- High robustness
- RoHS compliant
Applications
- Commercial avionics
- RADAR applications
- Industrial amplifiers
