NXP Semiconductors announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up to 5% more efficiency in Doherty applications. The first Gen9 transistors are designed for Doherty power amplifiers – symmetric and asymmetric – and offer benchmark power densities in existing high-volume packages. The Gen9 technology is also optimized for operation at 3.4-3.8 GHz in anticipation of these frequency bands being released on a global scale next year for use by mobile telecoms providers. NXP will showcase its first Gen9 products at IMS 2014 (booth 1733).
With 4G mobile data services now being rolled out globally, the Gen9 product family is specifically focused on compact, efficient and high-performance LTE base stations. Building on the excellent reputation already established by previous LDMOS generations, Gen9 delivers unprecedented efficiencies and excellent linearization capabilities for RF power amplifiers, at an industry-leading cost point.
NXP’s range of LDMOS RF power transistors has historically been designed with the demands of multiple telecoms markets in mind, meeting the challenges presented by a diversity of cellular standards and frequency bands. Gen9 continues this trend by being optimized for higher frequencies than currently used by operators, enabling designers to start creating devices in readiness for when these frequencies are released for use in 2015.
Availability
The 150 AV Gen9 device (BLC9G27LS-150 AV) is sampling now, and several other transistors are being sampled to major OEMs.
