NXP enlarges its small-signal MOSFETs portfolio with two new medium power P-channel MOSFETs in the ultra small, leadless package DFN1010D-3 (SOT1215) with solderable side pads. PMXB65UPE and PMXB75UPE offer a drain current of up to 3.2 A, drain-source voltages of 12 and 20 V and ESD protection of up to 1.5 kV.
The new types are ideal for portable and mobile applications where small-footprint solutions are required due to drain-source-on-state resistance of max 72 and 85 mΩ, a very low gate-source threshold voltage of 0.68 V and ultra-small package dimensions.
The package of only 1.1 × 1.0 × 0.37 mm with power dissipation Ptot of 1 W is suitable for currents up to 3 A. Its 100% tin-plated solderable side pads offer improved mounting and allow visual inspection of solder joints.
Key features and benefits
- ID up to 3.2 A
- Voltages of 12 and 20 V
- ESD protection of 1.5 kV
- Drain-source on-state resistance RDSon of 72 and 85 mΩ max
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection 1.5 kV HBM
- Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- 100% tin-plated, solderable side pads for excellent visual solder inspection
- Exposed drain pad for excellent thermal conduction
Key applications
- Portable and mobile, applications that require small-footprint solutions
- Power management
- Charging circuits
- Power switches (motors, fans and more)
- Level switching
