NXP has just released four new 20 V N- and P-channel MOSFETs in DFN1006. The PMZ600UNE, PMZ950UPE, PMZB600UNE, and PMZB950UPE feature TrenchMOS technology, ESD protection greater than 1 KV HBM, and a drain-source-on-state resistance down to 470 mOhm. They are optimized for space constrained applications such as switching-circuits, load switches and relay drivers in smart phones and tablets.
All three types are housed in ultra small leadless DFN1006 packages with a footprint of only 1.0 × 0.6 mm and package heights down to 0.37 mm. These single transistor types follow on from the previously released dual types in DFN1010: PMDXB600UNE, PMDXB950UPE, and PMCXB900UE.
Our complete portfolio of single and dual versions of 20 V Trench MOSFETs are available in different DFN packages, offering design flexibility and the perfect solution for every portable and wearable device.
Features and Benefits
- Trench MOSFET technology
- Leadless ultra small DFN plastic packages 1.0 × 0.6 mm
- Electro static discharge (ESD) protection > 1 kV HBM
- Drain-source on-state resistance RDSon = 470 mOhm and 1.02 Ohm
- Very low threshold voltage for portable applications VGs(th) = 0.7 V
Key Applications
- Relay driver
- High speed line driver
- Low-side load switch
- Switching circuit
