PTVA030121EA, PTVA120251EA and PTVA120501EA, the newest members of Infineon's 50 V LDMOS RF power transistor family, are designed to deliver excellent ruggedness, high efficiency and high gain.
The PTVA030121EA is an unmatched transistor capable of withstanding a 13:1 load mismatch at 12 W, CW conditions. The PTVA030121EA provides 12 W output power with 25 dB gain and 70% efficiency. It is ideal for applications in the 500 MHz to 1400 MHz frequency band.
Another unmatched driver transistor, PTVA120251EA can also operate in the 500 MHz to 1400 MHz band, providing 30 W output power with 16 dB gain and 56% efficiency (measured at 1400 MHz, VDD 50 V, and at 300 µsec, 12% DC pulse).
The PTVA120501EA is an input-matched transistor optimized for frequencies from 1200 MHz to 1400 MHz. It achieves 54 W output power with 16 dB gain and 55% efficiency (measured at 1400 MHz, VDD 50 V, and at 300 µsec, 10% DC pulse).
These driver devices are manufactured using Infineon's rugged 50 V LDMOS process, offering superior ruggedness, stability and power density.
All three transistors are available in compact 265-style, Pb-free, RoHS-compliant, open cavity ceramic packages.
Features
- Excellent ruggedness
- High-performance drivers
- Integrated ESD protection
- Pb-free and RoHS compliant
- Low thermal resistance
Applications
- General purpose driver
- L band radars
- UHF band applications
