Vishay Intertechnology released a new bidirectional and symmetrical (BiAs) single-line ESD protection diode for portable electronics that provides a reverse avalanche breakdown voltage above 15.5 V and a low forward voltage in the ultra-compact LLP1006-2L package.
With a small 1.0 mm by 0.6 mm footprint and an extremely low profile of < 0.4 mm, the Vishay Semiconductors VESD15A1-HD1-G4-08 is designed to reduce the board space required for ESD protection in smartphones, tablets, gaming systems, and MP3 players. For these devices, the diode offers a high isolation to ground characterized by a low leakage current of < 0.01 µA and low load capacitance of 45 pF at 0 V.
Any transient voltage signal exceeding the reverse breakdown voltage of 15.5 V minimum will be clamped and shorted to ground. Negative transient voltage signals drive the diode in the forward direction and are also clamped close below the ground level. The device features maximum reverse and forward clamping voltages of 20 V and 1.3 V at 1 A, respectively.
The VESD15A1-HD1-G4-08 provides transient protection for one data line as per IEC 61000-4-2 at ± 30 kV (air and contact discharge), and high surge current protection according to IEC 61000-4-5 of > 6 A. The device offers a moisture sensitivity level (MSL) of 1 in accordance to J-STD-020, a UL 94 V-0 flammability rating, and NiPdAu (e4) pin plating to prevent whisker growth. The protection diode is RoHS-compliant, halogen-free, and Vishay GREEN. Soldering can be checked by standard vision inspection, with no x-ray necessary.
Samples of the new VESD15A1-HD1-G4-08 are available now. Mass production is supported with lead times of eight weeks for large orders.
