NXP extended bipolar transistor offering with ten new high current and high power devices in the LFPAK56 (Power-SO8) package, with VCEO up to 100 V and IC up to 10 A. Delivering DPAK-like thermal and electrical performance in just half the footprint, they are AEC-Q101 qualified and support high-temperature operation (175 °C). And with more new 15 A devices on the way, you will soon be able to choose from a total of 25 types, with devices up to 100 V and 15 A in single and double configurations.
New types and datasheet links
- 40 V, 6 A PHPT60406NY (NPN)
- 40 V, 6 A PHPT60406PY (PNP)
- 40 V, 10 A PHPT60410NY (NPN)
- 40 V, 10 A PHPT60410PY (PNP)
- 60 V, 6 A PHPT60606NY (NPN)
- 60 V, 6 A PHPT60606PY (PNP)
- 100 V, 6 A PHPT61006NY (NPN)
- 100 V, 6 A PHPT61006PY (PNP)
- 100 V, 10 A PHPT61010NY (NPN)
- 100 V, 10 A PHPT61010PY (PNP)
Check out our LFPAK56 power package leaflet which includes application examples and an LFPAK/DPAK comparison.
Key features and benefits
- High power dissipation (Ptot)
- Space-saving 5 × 6 mm package outline is half the size of equivalent transistors in DPAK, SOT223 and other packages
- Low profile (1 mm)
- High reliability and mechanical ruggedness thanks to solid-copper clip (no wires)
- High energy efficiency due to less heat generation
- Future-proof, growing portfolio
Key applications
- Relay replacement
- Power management
- Motor drives
- Loadswitches
- Linear mode voltage regulators
- LED lighting and backlighting
