New F-RAM™ Expands the Density Range of the Most Energy-Efficient Nonvolatile RAMs for Mission-Critical Data Storage
Cypress Semiconductor introduced a family of 4 Mb serial Ferroelectric Random Access Memories (F-RAMs™), which are the industry’s highest density serial F-RAMs. The 4Mb serial F-RAMs feature a 40-Mhz Serial Peripheral Interface (SPI), a 2.0 V to 3.6 V operating voltage range and are available in industry-standard, RoHS-compliant package options. All Cypress F-RAMs provide 100-trillion read/write cycle endurance with 10-year data retention at 85 °C and 151 years at 65 °C.
Cypress F-RAMs are ideal solutions for applications requiring continuous and frequent high-speed reading and writing of data with absolute data security. The 4 Mb serial F-RAM family addresses mission-critical applications such as industrial controls and automation, industrial metering, multifunction printers, test and measurement equipment and medical wearables.
Availability
The 4 Mb serial F-RAMs are sampling today in industry-standard 8EIAJ and 8TDFN packages, with production expected in the fourth quarter of 2015.
