Diodes Incorporated introduced the DMN3027LFG 30 V N-channel MOSFET. This device is designed as a switch to rapidly and safely discharge large bulk capacitors used on FPGA power rails. The latest FPGAs found in telecoms equipment, servers and data centers have multiple power rails that need to be correctly sequenced to safely power these systems up and down. Designers of high-reliability DC-DC power supplies can achieve this quickly and easily with this new MOSFET from Diodes.
The DMN3027LFG has an RDS(on) of 26 mΩ at 4.5 V, which is low enough to discharge a 15 mF capacitor in <10 ms but not so low that sharply rising current peaks could cause EMI issues or give rise to transient thermal stresses, potentially damaging the MOSFET or capacitor bank. Under the typical FPGA low-voltage rail conditions of 1 V, this current is self-limited by the MOSFET channel resistance as specified in the safe operating area (SOA). This SOA is given at a +60 °C ambient temperature with minimal heat-sinking to support the typical application conditions, allowing peak currents up to 20 A to be safely handled in <10 ms.
The DMN3027LFG is offered in a PowerDI®3333 package, which has a low thermal resistance from junction to exposed pad of <10 °C/W enabling the dissipation of up to 3 W.
