Fourth-Generation 600 V E Series Power MOSFET Lowers Conduction and Switching Losses, Increases Efficiency

Superjunction Device Provides Industry’s Lowest R_DS(ON)∙Q_g FOM for Telecom, Industrial, and Enterprise Applications

Vishay Intertechnology introduced the first device in its fourth generation of 600 V E Series power MOSFETs. Providing high efficiency for telecom, industrial, and enterprise power supply applications, the Vishay Siliconix n-channel SiHP065N60E slashes on-resistance by 30% compared to previous 600 V E Series MOSFETs, while delivering 44% lower gate charge. This results in the industry’s lowest gate charge times on-resistance, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications.

“We are committed to providing our customers with a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required by the latest electronic systems,” said David Grey, senior director of market development for Vishay. “With the SiHP065N60E and the upcoming fourth-generation 600 V E Series family, we are addressing the need for efficiency and power density improvements in the first stages of the power system architecture – power factor correction and subsequent high-voltage DC/DC converter blocks.”

Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP065N60E features low maximum on-resistance of 0.065 Ω at 10 V, and ultra-low gate charge down to 49 nC. The device’s FOM of 2.8 Ω×nC is 25% lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHP065N60E provides low effective output capacitances C_O(ER) and C_O(TR) of 93 pf and 593 pF, respectively. These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial, and enterprise power systems.

Offered in the TO-220AB package, the device released today is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100% UIS testing.

Samples of the SiHP065N60E are available now. Production quantities will be available in January 2017, with lead times of 10 weeks.