The optimal solution to eliminate batteries for SRAM in industrial machinery
Fujitsu Semiconductor announced that it has developed the MB85R8M2T, an 8 Mbit FRAM that has the largest density in Fujitsu's family of FRAM non-volatile memories. Mass-produced products are currently available.
This product features a wide power-supply voltage range from 1.8 V to 3.6 V and an SRAM-compatible parallel interface. The MB85R8M2T is the most appropriate memory that fits the requirements of customers who are developing industrial machinery and want to use something with larger density than the current 4 Mbit FRAM, or to eliminate the need of a battery for an SRAM whose usage pertains to the backup of data during a power outage.
By replacing the SRAM device with this new FRAM product through various industrial applications, such as in control units in facilities and robots, it can eliminate the need for a backup battery and can save approximately 90% of the mounting area for memory parts. It contributes towards reducing battery-related costs.
Key Specifications
- Density (configuration): 8 Mbit (512K × 16 bit)
- Interface: Parallel Interface
- Operating voltage: 1.8 V to 3.6 V
- Operating temperature range: –40 °C to +85 °C
- Read/Write endurance: 10 trillion times (1013 times)
- Package: 48-pin FBGA (8.00 mm × 6.00 mm)
