Fairchild Semiconductor’s new FDB2614 (200 V) and FDB2710 (250 V) N-channel MOSFETs are designed specifically to provide industry-leading system efficiency and space optimization in plasma display panel (PDP) applications. By utilizing Fairchild’s proprietary PowerTrench® process technology, these MOSFETs achieve the lowest available RDS(on) (FDB2614: 22.9 mOhms, typ; FDB2710: 36.3 mOhms, typ), compared to similar devices on the market. This low R DS(on), combined with a very low gate charge (Qg ), results in a best-in-class Figure of Merit (FOM), which in turn translates into lower conduction loss and excellent switching performance in PDP systems. The devices’ extremely low RDS(on) and small die size at 200 V or 250 V breakdown voltages enables these devices to be packaged in space-saving D 2PAK packaging. An added benefit of PowerTrench MOSFETs is their ability to enhance system reliability by withstanding both high-speed voltage (dv/dt) and current (di/dt) switching transients. .
Key features and benefits of the FDB2614 and FDB2710 include:
- Lowest RDS(on) and low gate charge for best-in-class FOM (R DS(on) x Qg) to enhance system efficiency;
- D2PAK (TO-263) packages to increase board space compared to larger TO-3P-packaged planar MOSFETs with similar RDS(on); and
- High dv/dt and di/dt handling improve system reliability.
Price (1000 pcs, each): US$ 3.00––FDB2614 (200 V , 22.9 mOhms, typ): US$ 2.80––FDB2710 (250V , 36. 3 mOhms, typ)
Availability: Samples available now
Delivery: 12 weeks ARO
