New devices increase power supply efficiency even further
Toshiba Electronics Europe has launched a new series of next-generation 650 V power MOSFETs that are intended for use in server power supplies in data centers, solar (PV) power conditioners, uninterruptible power systems (UPS) and other industrial applications.
The first device in the DTMOS VI series is the TK040N65Z, a 650 V device that supports continuous drain currents (ID) up to 57 A and 228 A when pulsed (IDP). The new device offers an ultra-low drain-source on-resistance RDS(ON) of 0.04 Ω (0.033 Ω typ.) which reduces losses in power applications. The enhancement mode device is ideal for use in modern high-speed power supplies, due to the reduced capacitance in the design.
Power supply efficiency is improved as a result of reductions in the key performance index / figure-of-merit (FoM) – RDS(ON) × Qgd. The TK040N65Z shows a 40% improvement in this important metric over the previous DTMOS IV-H device, which represents a significant gain in power supply efficiency in the region of 0.36% – as measured in a 2.5 kW PFC circuit.
The new device is housed in an industry-standard TO-247 package, ensuring compatibility with legacy designs as well as suitability for new projects.
The new device enters mass production today and shipments begin immediately.
