Proven process, robust and scalable, ready for volume applications
Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA, a very robust device with a gate-source voltage (VGS) of ±20 V and a temperature range of –55 to +175 °C. The GAN063-650WSA features a low RDS(on) – down to 60 mΩ – and fast switching to offer very high efficiency.
Nexperia is targeting high performance application segments including xEV, datacentres, telecom infrastructure, industrial automation and high-end power supplies. Nexperia’s GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon fabrication facilities. More, this device is available in the industry-standard TO-247, allowing customers to benefit from exceptional GaN performance in a familiar package.
The GAN063-650WSA GaN FET from Nexperia is the first in a portfolio of GaN devices that Nexperia is developing to address the automotive, communication infrastructure and industrial markets.
