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NewsMemory

News & Press Releases Memory - 9

Subsection: "Memory"
Search results: 102 Output: 81-90
  1. Samsung Electronics Raises the Bar for High Density Flash Memory-Embedded Smart Card ICs
    Memory Wireless Samsung S3FJ91L
    Samsung Electronics announced the introduction of a 2MB flash memory-embedded smart card IC (S3FJ91L), raising the bar even higher by doubling the data storage capabilities. Samsung's new 2MB smart card IC meets all the industry requirements for 3G ...
    23-11-2005
  2. Intel Launches High-Performance 90-Nanometer Multi-Level-Cell Nor Flash Memory For Multimedia Handsets
    Memory Intel
    Intel Corporation announced it is shipping in volume the industry's first 90-nanometer (nm) multi-level cell (MLC) NOR flash memory device. The new Intel StrataFlash® Cellular Memory (M18) delivers faster performance, higher density and lower ...
    22-11-2005
  1. Samsung Electronics Develops World's First 512-Megabit DDR2 with 70nm Process Technology
    Memory Samsung
    Samsung Electronics announced that it has completed development of the world-first 512-Megabit (Mb) DDR2 SDRAM using 70-nanometer process, the smallest process technology yet applied to a DRAM device. The new 70nm technology maintains continuity ...
    06-11-2005
  2. Spansion Announces World's First Single-chip 1 Gigabit NOR Flash Memory
    Memory Spansion
    First Samples Based on 90-Nanometer MirrorBit Technology Spansion LLC announced it is sampling the world’s first single-chip 1 gigabit (Gb) NOR Flash memory device to customers in the embedded market. Based on 90-nanometer (nm) ...
    17-10-2005
  3. Samsung Electronics Adds Gigabyte Densities to MultiMediaCard Line-up
    Memory Samsung
    Samsung Electronics Co. announced that it is sampling Gigabyte (GB) MultiMediaCards (MMCs) with customers: 1GB and 2GB MMC plus cards, and the industry's first 1GB MMC mobile card. The higher densities and faster speeds of Samsung's Version 4.1 ...
    01-10-2005
  4. Samsung Accelerates Shift to High-Performance Computing by Producing More DDR2 than DDR1 Memory
    Memory Samsung
    Samsung Electronics announced that it is leading the industry shift from DDR1 (Double Data Rate 1) to DDR2 main memory. As of July, approximately 40 percent of the company's total DRAM (Dynamic Random Access Memory) output is DDR2 and approximately ...
    28-09-2005
  5. Spansion Demonstrates High-Density Flash Memory Solutions Based on 90nm MirrorBitTM Technology
    Memory Spansion
    1 Gb NOR and ORNAND Devices Expand Code and Data Storage Capabilities For Wireless and Embedded Applications Spansion LLC showed silicon of its single-chip 1 Gbit (Gb) GL NOR Flash memory and demonstrated working silicon of its 1Gb ORNAND Flash ...
    27-09-2005
  6. Spansion Introduces Innovative Package-on-Package Solution To Reduce Wireless Device Size
    Memory Spansion
    Spansion's Solution Reduces Form Factors as Devices Adopt New Features Spansion LLC announced it is shipping Package-on-Package (PoP) Flash memory samples to customers that will enable them to deliver sleek, feature-rich wireless phones, PDAs, ...
    22-09-2005
  7. Spansion and TSMC Team to Manufacture Innovative Flash Memory Technology
    Memory Spansion
    Leading Flash and Foundry Suppliers Partner to Supplement Manufacturing for Spansion's 110 Nanometer MirrorBit Technology Spansion LLC , the Flash memory venture of AMD and Fujitsu Limited , and Taiwan Semiconductor Manufacturing Company (TSMC) ...
    19-08-2005
  8. Samsung demonstrated new products in Memory, System Logic and Display
    Memory Samsung
    Samsung Electronics Co. demonstrated the 1Gigabit (Gb) mobile DRAM, and unveiled five other leading edge mobile technologies The Samsung's advancements announced included: System-in-Package (SiP) with a 300MHz mobile CPU; 1Gigabit (Gb) NAND flash ...
    22-04-2005
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