Adding resistive bias and capacitive coupling to an N-channel MOSFET (a) improves transition times but introduces waveform droop during on or off intervals (b)
| Authors | Steve Franks |
| Main Document | Article «FET biasing targets battery-powered PWM applications» |
| Description | Figure 3 |
| File Format / Size | PDF / 14 Kb |
| Document Language | English |
Other Materials from the Main Document
- Article «FET biasing targets battery-powered PWM applications»
- Figure 1. The textbook complementary-CMOS pair (a) produces a clean output waveform with fast on/off transitions (b)
- Figure 2. An N-channel FET driver (a) has output that exhibits an exponential rising edge on shutoff (b)
- Figure 3. Adding resistive bias and capacitive coupling to an N-channel MOSFET (a) improves transition times but introduces waveform droop during on or off intervals (b)
- Figure 4. Inserting a zener diode into the bias divider allows optimization of the coupling capacitor's value and the P-channel device's bias voltage for logic-level drive
- Figure 5. This Class D audio amplifier boosts its driver's output to 200 W rms for a 48 V power supply
