Datasheet NTE112 - NTE Electronics SCHOTTKY RECTIFIER, 30 mA, 5 V, DO-35

Detailed Description

Manufacturer: NTE Electronics

Description: SCHOTTKY RECTIFIER, 30 mA, 5 V, DO-35

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Docket:
NTE112 Silicon Small Signal Schottky Diode
Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications.
Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Surge Non-Repetitive Forward Current (tp 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +150°C Thermal Resistance, Junction-to-Ambient (Note 1), Rth (j- a) . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W Maximum Lead

Specifications:

• Diode Type: Schottky
• Forward Current If(AV): 30 mA
• Forward Surge Current Ifsm Max: 60 mA
• Forward Voltage VF Max: 0.55 V
• Number of Pins: 2
• Package / Case: DO-35
• Repetitive Reverse Voltage Vrrm Max: 5 V

Accessories:

• MULTICORE (SOLDER) - MM02104
• SPC Technology - 3613