Datasheet NTE583 - NTE Electronics RF DIODE, SCHOTTKY, 2 pF, 70 V, DO-35

Detailed Description

Manufacturer: NTE Electronics

Description: RF DIODE, SCHOTTKY, 2 pF, 70 V, DO-35

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Docket:
NTE583 Silicon Rectifier Diode Schottky, RF Switch
Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn­on voltage and ultrafast switching.

This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (TA = +25°C, Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Forward Continuous Current (Figure 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Surge Non­Repetitive Forward Current (tp 1s, Figure 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­65° to +200°C Thermal

Specifications:

• Capacitance Ct: 2 pF
• Diode Type: RF Schottky
• Forward Current If Max: 15 mA
• Forward Voltage VF Max: 1 V
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Package / Case: DO-35
• Reverse Voltage Vr: 70 V

RoHS: Yes

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• MULTICORE (SOLDER) - MM02104
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