Datasheet BAS116 - Infineon DIODE, LOW LEAKAGE, SOT-23

Detailed Description

Manufacturer: Infineon

Description: DIODE, LOW LEAKAGE, SOT-23

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Docket:
BAS116...
Silicon Low Leakage Diode · Low-leakage applications · Medium speed switching times
BAS116
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Type BAS116

Specifications:

• Breakdown Voltage: 75 V
• Current If @ Vf: 150 mA
• Current Ifsm: 4.5 A
• Current Ir Max: 5 µA
• Diode Type: Small Signal
• Forward Current If Max: 250 mA
• Forward Current If(AV): 250 mA
• Forward Surge Current Ifsm Max: 4.5 A
• Forward Voltage VF Max: 1.25 V
• Forward Voltage: 1.25 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 3
• Package / Case: SOT-23
• Peak Forward Current: 250 mA
• Power Dissipation Max: 370 mW
• Repetitive Reverse Voltage Vrrm Max: 75 V
• Reverse Recovery Time trr Max: 1.5 µs
• Reverse Recovery Time trr Typ: 0.6 µs
• SMD Marking: JVs
• Vr Ir Measurement Voltage: 75 V

RoHS: Yes