Datasheet BAS216 - NXP DIODE, SWITCHING, SOD-110

Detailed Description

Manufacturer: NXP

Description: DIODE, SWITCHING, SOD-110

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D154
BAS216 High-speed switching diode

Simulation Model

Specifications:

• Application Code: High Speed
• Current If @ Vf: 150 mA
• Current Ifsm: 4 A
• Current Ir Max: 30 nA
• Diode Configuration: Single
• Diode Type: Small Signal
• Forward Current If Max: 250 mA
• Forward Current If(AV): 250 mA
• Forward Surge Current Ifsm Max: 4 A
• Forward Voltage VF Max: 1.25 V
• Forward Voltage: 1.25 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 2
• Package / Case: SOD-110
• Peak Forward Current: 500 mA
• Pin Configuration: 1 A, 2K
• Power Dissipation Max: 400 mW
• Repetitive Reverse Voltage Vrrm Max: 85 V
• Reverse Recovery Time trr Max: 4 ns
• Reverse Voltage Vr Max: 75 V
• SMD Marking: A6
• SVHC: No SVHC (18-Jun-2010)

RoHS: Yes