Datasheet IRFH8318TR2PBF - International Rectifier MOSFET, N CH, W DIODE, 30 V, 50 A, PQFN56

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N CH, W DIODE, 30 V, 50 A, PQFN56

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Docket:
PD - 97649A
IRFH8318PbF
HEXFET® Power MOSFET
VDS Vgs max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)

Specifications:

• Continuous Drain Current Id: 50 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0025 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 59 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: QFN
• Transistor Polarity: N Channel

RoHS: Yes