Datasheet 2N7002E - NXP MOSFET, N CH, 60 V, 0.385 A, SOT23

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 60 V, 0.385 A, SOT23

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Docket:
2N7002E
N-channel TrenchMOS FET
Rev.

03 -- 28 April 2006 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: 385 mA
• Drain Source Voltage Vds: 60 V
• Number of Pins: 3
• On Resistance Rds(on): 0.78 Ohm
• Operating Temperature Range: -65°C to +150°C
• Power Dissipation: 830 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel

RoHS: Yes