Datasheet PMGD290XN - NXP MOSFET, NN CH, 20 V, 0.86 A, SOT363

Detailed Description

Manufacturer: NXP

Description: MOSFET, NN CH, 20 V, 0.86 A, SOT363

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Docket:
PMGD290XN
Dual N-channel µTrenchMOSTM extremely low level FET
MBD128
Rev.

01 -- 26 February 2004
Product data

Specifications:

• Continuous Drain Current Id: 860 mA
• Drain Source Voltage Vds: 20 V
• Module Configuration: Dual N Channel
• Number of Pins: 6
• On Resistance Rds(on): 0.29 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 410 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-363
• Transistor Polarity: N Channel

RoHS: Yes

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