Datasheet NGD18N40ACLBT4G - ON Semiconductor IGBT, IGNITION, N-CH, 400 V, 18 A, DPAK

Detailed Description

Manufacturer: ON Semiconductor

Description: IGBT, IGNITION, N-CH, 400 V, 18 A, DPAK

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Docket:
NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V
N-Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications.

Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
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Specifications:

• Collector Emitter Voltage V(br)ceo: 400 V
• Collector Emitter Voltage Vces: 1.8 V
• DC Collector Current: 18 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 115 W
• Transistor Case Style: TO-252
• Transistor Type: IGBT
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)