Datasheet NTE274 - NTE Electronics TRANSISTOR, NPN, 80 V, 8 A, TO-66

Detailed Description

Manufacturer: NTE Electronics

Description: TRANSISTOR, NPN, 80 V, 8 A, TO-66

Download Data Sheet

Docket:
NTE274 (NPN) & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch
Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low­frequency switching and hammer driver applications.

Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector­Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector­Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built­In Base­Emitter Shunt Resistors Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 80 V
• DC Collector Current: 8 A
• DC Current Gain: 100
• Number of Pins: 2
• Operating Temperature Range: -65°C to +200°C
• Power Dissipation: 50 W
• Transistor Polarity: NPN
• RoHS: Yes