Datasheet VS-FB190SA10 - Vishay MOSFET, N-CH, 100 V, 190 A, SOT-227

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N-CH, 100 V, 190 A, SOT-227

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Docket:
VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
FEATURES
· Fully isolated package · Very low on-resistance · Fully avalanche rated · Dynamic dV/dt rating · Low drain to case capacitance

Specifications:

• Continuous Drain Current Id: 190 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 4
• On Resistance Rds(on): 0.0054 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 568 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3.3 V
• Transistor Case Style: SOT-227
• Transistor Polarity: N Channel
• RoHS: Yes

Other Names:

VSFB190SA10, VS FB190SA10