Datasheet BSP316P L6327 - Infineon MOSFET, P-CH, 100 V, 680 mA, SOT-223

Detailed Description

Manufacturer: Infineon

Description: MOSFET, P-CH, 100 V, 680 mA, SOT-223

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Docket:
BSP316P SIPMOS Small-Signal-Transistor
Feature · P-Channel · Enhancement mode · Logic Level · dv/dt rated
· Qualified according to AEC Q101
Drain pin 2/4 Gate pin1 Source pin 3
Product Summary VDS R DS(on) ID -100 1.8 -0.68 V A

Specifications:

• Continuous Drain Current Id: -680 mA
• Drain Source Voltage Vds: -100 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 4
• On Resistance Rds(on): 1.4 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -1.5 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• RoHS: Yes