Datasheet BSP321P L6327 - Infineon MOSFET, P-CH, 100 V, 980 mA, SOT-223

Detailed Description

Manufacturer: Infineon

Description: MOSFET, P-CH, 100 V, 980 mA, SOT-223

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Docket:
BSP321P
SIPMOS® Small-Signal-Transistor
Features · P-Channel · Enhancement mode · Normal level · Avalanche rated · Pb-free lead plating; RoHS compliant · Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID -100 900 -0.98 V m A
PG-SOT-223

Specifications:

• Continuous Drain Current Id: -980 mA
• Drain Source Voltage Vds: -100 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 4
• On Resistance Rds(on): 0.689 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• RoHS: Yes