Datasheet IPB039N10N3 G - Infineon MOSFET, N-CH, 100 V, 160 A, TO263-7
Part Number: IPB039N10N3 G
Detailed Description
Manufacturer: Infineon
Description: MOSFET, N-CH, 100 V, 160 A, TO263-7
Docket:
IPB039N10N3 G
"%&$!"# 3 Power-Transistor
Features P ' 3 81>>5< >? A =1<< 5E5< P G 5<5>C71C 3 81A GR 9H"[Z# @A 4D C ( & 3 < 5 75 ? 3 P.
5A < F ? >A 9C 5 R 9H"[Z# H? 5BB1>3 P " 9 3 D A 3 1@12 9C 78 A5>C
)#
TM
Specifications:
- Continuous Drain Current Id: 160 A
- Drain Source Voltage Vds: 100 V
- MSL: MSL 1 - Unlimited
- Number of Pins: 7
- On Resistance Rds(on): 0.0033 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation: 214 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 2.7 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- RoHS: Yes