Datasheet NTE2903 - NTE Electronics MOSFET, N CH, 500 V, 5 A, TO-220FN-3

Detailed Description

Manufacturer: NTE Electronics

Description: MOSFET, N CH, 500 V, 5 A, TO-220FN-3

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Docket:
NTE2903 MOSFET N-Ch, Enhancement Mode High Speed Switch
Features: D Low Drain-Source ON Resistance: RDS(ON) = 1.35 Typ D High Forward Transfer Admittance: |yfs| = 3.5S Typ D Low Leakage Current: IDSS = 100A (VDS = 500V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain-Source Voltage, VDSS .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate-Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current (Note 2), ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Pulsed (t = 1ms) . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Continuous Drain Current Id: 5 A
• Drain Source Voltage Vds: 500 V
• Number of Pins: 3
• On Resistance Rds(on): 1.35 Ohm
• Power Dissipation: 35 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Polarity: N Channel
• RoHS: Yes