Datasheet Vishay 1N4148-TAP

1N4148
www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes
FEATURES Silicon epitaxial planar diode Electrically equivalent diodes: 1N4148 -1N914 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS MECHANICAL DATA
Case: DO-35 Weight: approx. 105 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box Extreme fast switches PARTS TABLE
PART 1N4148 ORDERING CODE 1N4148-TAP or 1N4148TR TYPE MARKING V4148 INTERNAL CONSTRUCTION Single diode REMARKS Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward continuous current Average forward current Power dissipation VR = 0 l = 4 mm, TL = 45 °C l = 4 mm, TL 25 °C tp = 1 s TEST CONDITION SYMBOL VRRM VR IFSM IFRM IF IF(AV) Ptot Ptot VALUE 100 75 2 500 300 150 440 500 UNIT V V A mA mA mA mW mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range TEST CONDITION l = 4 mm, TL = constant SYMBOL RthJA Tj Tstg VALUE 350 175 -65 to + 150 UNIT K/W °C °C Rev. 1.3, 04-Dec-13 Document Number: 81857 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148
www.vishay.com Vishay Semiconductors
TEST CONDITION IF = 10 mA VR = 20 V VR = 20 V, Tj = 150 °C VR = 75 V IR = 100 A, tp/T = 0.01, tp = 0.3 ms VR = 0 V, f = 1 MHz, VHF = 50 mV VHF = 2 V, f = 100 MHz IF = IR = 10 mA, iR = 1 mA IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 SYMBOL VF IR IR IR V(BR) CD r trr trr 45 8 4 100 4 MIN. TYP. MAX. 1 25 50 5 UNIT V nA A A V pF % ns ns ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Reverse current Breakdown voltage Diode capacitance Rectification effiency Reverse recovery time TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.2 1.0 I F = 100 mA 1000 VF -Forward Voltage (V) IR-Reverse Current (nA) Tj = 25 °C
100 0.8 10 mA 0.6 0.4 0.1 mA 0.2 0 -30 1 mA Scattering Limit
10 1 0 30 60 90 120
94 9098 1 10 VR-Reverse Voltage (V) 100 94 9169 Tj -Junction Temperature (°C) Fig. 1 -Forward Voltage vs. Junction Temperature Fig. …