Datasheet Texas Instruments UC1708JE883B
| Manufacturer | Texas Instruments |
| Series | UC1708 |
| Part Number | UC1708JE883B |
Non-Inverting High Speed Power Drivers 16-CDIP -55 to 125
Datasheets
Dual Non-Inverting Power Driver datasheet
PDF, 1.9 Mb, Revision: C, File published: Sep 25, 2007
Extract from the document
Prices
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Packaging
| Pin | 16 | 16 | 16 |
| Package Type | J | J | J |
| Industry STD Term | CDIP | CDIP | CDIP |
| JEDEC Code | R-GDIP-T | R-GDIP-T | R-GDIP-T |
| Package QTY | 1 | 1 | 1 |
| Carrier | TUBE | TUBE | TUBE |
| Device Marking | A | 5962-0051401QE | UC1708JE/883B |
| Width (mm) | 6.92 | 6.92 | 6.92 |
| Length (mm) | 19.56 | 19.56 | 19.56 |
| Thickness (mm) | 4.57 | 4.57 | 4.57 |
| Pitch (mm) | 2.54 | 2.54 | 2.54 |
| Max Height (mm) | 5.08 | 5.08 | 5.08 |
| Mechanical Data | Download | Download | Download |
Parametrics
| Fall Time | 25 ns |
| Input Threshold | CMOS,TTL |
| Input VCC(Max) | 35 V |
| Input VCC(Min) | 5 V |
| Number of Channels | 2 |
| Operating Temperature Range | -55 to 125 C |
| Package Group | CDIP |
| Peak Output Current | 3 A |
| Power Switch | MOSFET |
| Prop Delay | 25 ns |
| Rating | Military |
| Rise Time | 25 ns |
| Special Features | Enable Pin,Shutdown,Thermal Shutdown |
Eco Plan
| RoHS | See ti.com |
Application Notes
- DN-35 IGBT Drive Using MOSFET Gate DriversPDF, 54 Kb, File published: Sep 5, 1999
The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices - U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Kb, File published: Sep 5, 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Kb, File published: Sep 5, 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Model Line
Series: UC1708 (8)
Manufacturer's Classification
- Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver
