Datasheet Texas Instruments TPS2812DR
| Manufacturer | Texas Instruments |
| Series | TPS2812 |
| Part Number | TPS2812DR |
Non-inverting Dual High-Speed MOSFET Drivers with Internal Regulator 8-SOIC
Datasheets
Dual High-Speed MOSFET Drivers datasheet
PDF, 1.7 Mb, Revision: F, File published: Oct 13, 2004
Extract from the document
Prices
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Packaging
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 2812 |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | Download |
Parametrics
| Channel Input Logic | Non-Inverting |
| Fall Time | 15 ns |
| Input Threshold | CMOS |
| Input VCC(Max) | 14 V |
| Input VCC(Min) | 4 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | SOIC |
| Peak Output Current | 2 A |
| Power Switch | MOSFET |
| Prop Delay | 25 ns |
| Rating | Catalog |
| Rise Time | 14 ns |
| Special Features | Internal Regulator |
Eco Plan
| RoHS | Compliant |
Model Line
Series: TPS2812 (8)
Manufacturer's Classification
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver
