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SLPS367B – AUGUST 2012 – REVISED JULY 2014 CSD18502KCS 40-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C UNIT Drain-to-Source Voltage 40 V Qg Gate Charge Total (10V) 52 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage 8.4 nC VGS = 4.5 V 3.3 mΩ VGS = 10 V 2.4 mΩ 1.8 V Ordering Information(1)
Device Package Media Qty Ship CSD18502KCS TO-220 Plastic
Package Tube 50 Tube 2 Applications TYPICAL VALUE VDS DC-DC Conversion
Secondary Side Synchronous Rectifier
Motor Control (1) For all available packages, see the orderable addendum at
the end of the data sheet. Absolute Maximum Ratings 3 Description
This 2.4 mО©, 40 V, TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), …
