PDF, 1.5 Mb, File published: Nov 8, 2013
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CSD85312Q3E
www.ti.com SLPS457 – NOVEMBER 2013 Dual 20 V N-Channel NexFET™ Power MOSFETs
FEATURES . 1 Common Source Connection
Low Drain to Drain On-Resistance
Space Saving SON 3.3 x 3.3 mm Plastic
Package
Optimized for 5 V Gate Drive
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free PRODUCT SUMMARY
TA = 25В°C TYPICAL VALUE VDS Drain to Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate to Drain RDD(on) Drain to Drain On Resistance
(Q1 + Q2) VGS(th) Threshold Voltage UNIT 20 V 11.7 nC 1.6 nC VGS = 4.5 V 11.7 mΩ VGS = 8 V 10.3 mΩ 1.1 V ORDERING INFORMATION
Device Package Media CSD85312Q3E SON 3.3 x 3.3 mm
Plastic Package 13 Inch
Reel Qty Ship 2500 Tape and
Reel APPLICATIONS Adaptor or USB Input Protection for Notebook
PCs and Tablets ABSOLUTE MAXIMUM RATINGS
TA = 25°C VALUE UNIT VDS Drain to Source Voltage 20 V DESCRIPTION VGS Gate to Source Voltage +10/–8 V The CSD85312Q3E is a 20 V common-source, dual
N-channel device designed for adaptor or USB input
protection. This SON 3.3 x 3.3 mm device has low
drain to drain on-resistance that minimizes losses and …
