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High efficiency ultrafast diode
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STTH102
High efficiency ultrafast diode
Main product characteristics
IF(AV) 1A VRRM 200 V Tj (max) 175° C VF(max) 0.78 V trr (max) 20 ns A A K K Features and benefits
SMA
(JEDEC DO-214AC)
STTH102A ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description Marking STTH102A U12 STTH102 STTH102 STTH102RL STTH102 Parameter VRRM Repetitive peak reverse voltage IF(AV) Average forward current IFSM Surge non repetitive forward
current Tstg Storage temperature range dV/dt Part Number Absolute ratings (limiting values) Symbol Tj STTH102 Order codes The STTH102, which is using ST’s new 200 V
planar technology, is specially suited for switching
mode base drive and transistor circuits. The
device is also intended for use as a free wheeling
diode in power supplies and other power
switching applications.
Table 1. DO-41 SMA TL = 148° C δ = 0.5 DO-41 TL = 130° C δ = 0.5 SMA Unit 200 V 1 A 40
tp = 10 ms Sinusoidal DO-41 A
50 Maximum operating junction temperature
Critical rate of rise of reverse voltage November 2006 Value Rev 5 -65 to + 175 °C 175 °C 10000 V/µs 1/7
www.st.com 7 Characteristics STTH102 1 Characteristics Table 2. Thermal resistance Symbol
Rth(j-l) Parameter 30 DO-41 50 °C/W
Lead length = 10 mm Static Electrical Characteristics Symbol VF(2) SMA Unit Junction to lead Table 3. IR (1) Value Parameter Tests conditions
Tj = 25° C Reverse leakage current Typ Max. Unit 1 Tj = 125° C
Tj = 25° C Forward voltage drop Min. Tj = 125° C VR = VRRM µA
1 25 IF = 700 mA …
