Datasheet Texas Instruments CSD19532Q5B
Manufacturer | Texas Instruments |
Series | CSD19532Q5B |
100V, 4.0 mOhm, SON5x6 N-Channel NexFETВ™ Power MOSFET
Datasheets
CSD19532Q5B 100 V N-Channel NexFET Power MOSFET datasheet
PDF, 867 Kb, Revision: B, File published: Jun 13, 2017
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Status
CSD19532Q5B | CSD19532Q5BT | |
---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
Manufacture's Sample Availability | No | Yes |
Packaging
CSD19532Q5B | CSD19532Q5BT | |
---|---|---|
N | 1 | 2 |
Pin | 8 | 8 |
Package Type | DNK | DNK |
Package QTY | 2500 | 250 |
Carrier | LARGE T&R | SMALL T&R |
Device Marking | CSD19532 | CSD19532 |
Width (mm) | 6 | 6 |
Length (mm) | 5 | 5 |
Thickness (mm) | .95 | .95 |
Mechanical Data | Download | Download |
Parametrics
Parameters / Models | CSD19532Q5B | CSD19532Q5BT |
---|---|---|
Configuration | Single | Single |
ID, Silicon limited at Tc=25degC, A | 140 | 140 |
IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
Package, mm | SON5x6 | SON5x6 |
QG Typ, nC | 48 | 48 |
QGD Typ, nC | 8.7 | 8.7 |
Rds(on) Max at VGS=10V, mOhms | 4.9 | 4.9 |
VDS, V | 100 | 100 |
VGS, V | 20 | 20 |
VGSTH Typ, V | 2.6 | 2.6 |
Eco Plan
CSD19532Q5B | CSD19532Q5BT | |
---|---|---|
RoHS | Compliant | Compliant |
Pb Free | Yes | Yes |
Application Notes
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, File published: Nov 16, 2011
Model Line
Series: CSD19532Q5B (2)
Manufacturer's Classification
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor