Datasheet Texas Instruments ISO5851QDWRQ1
Manufacturer | Texas Instruments |
Series | ISO5851-Q1 |
Part Number | ISO5851QDWRQ1 |
Automotive, High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features 16-SOIC -40 to 125
Datasheets
ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet
PDF, 1.5 Mb, Revision: A, File published: Dec 22, 2016
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Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Packaging
Pin | 16 |
Package Type | DW |
Industry STD Term | SOIC |
JEDEC Code | R-PDSO-G |
Package QTY | 2000 |
Carrier | LARGE T&R |
Device Marking | ISO5851Q |
Width (mm) | 7.5 |
Length (mm) | 10.3 |
Thickness (mm) | 2.35 |
Pitch (mm) | 1.27 |
Max Height (mm) | 2.65 |
Mechanical Data | Download |
Parametrics
DIN V VDE V 0884-10 Working Voltage | 2121 Vpk |
DIN V VDE V 0884-10 Transient Overvoltage Rating | 8000 Vpk |
Enable/Disable Function | N/A |
Input VCC(Max) | 5.5 V |
Input VCC(Min) | 3 V |
Isolation Rating | 5700 Vrms |
Number of Channels | 1 |
Operating Temperature Range | -40 to 125 C |
Output VCC/VDD(Max) | 30 V |
Output VCC/VDD(Min) | 15 V |
Package Group | SOIC |
Package Size: mm2:W x L | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) PKG |
Peak Output Current | 5 A |
Power Switch | IGBT |
Prop Delay | 110 ns |
Prop Delay(Max) | 110 ns |
Eco Plan
RoHS | Compliant |
Design Kits & Evaluation Modules
- Evaluation Modules & Boards: ISO5851EVM
ISO5851 Evaluation Module (EVM)
Lifecycle Status: Active (Recommended for new designs)
Model Line
Series: ISO5851-Q1 (2)
- ISO5851QDWQ1 ISO5851QDWRQ1
Manufacturer's Classification
- Semiconductors > Isolation > Isolated Gate Driver