Datasheet Texas Instruments LM5113TME/NOPB
Manufacturer | Texas Instruments |
Series | LM5113 |
Part Number | LM5113TME/NOPB |
100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA
Datasheets
LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs datasheet
PDF, 2.4 Mb, Revision: G, File published: Oct 14, 2015
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Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Packaging
Pin | 12 |
Package Type | YFX |
Industry STD Term | DSBGA |
JEDEC Code | R-XBGA-N |
Package QTY | 250 |
Carrier | SMALL T&R |
Device Marking | 5113 |
Thickness (mm) | .42 |
Pitch (mm) | .4 |
Max Height (mm) | .675 |
Mechanical Data | Download |
Parametrics
Bus Voltage | 90 V |
Driver Configuration | Dual,Independent |
Fall Time | 3.5 ns |
Input Threshold | TTL |
Input VCC(Max) | 5.5 V |
Input VCC(Min) | 4.5 V |
Number of Channels | 2 |
Operating Temperature Range | -40 to 125 C |
Package Group | DSBGA |
Package Size: mm2:W x L | See datasheet (DSBGA) PKG |
Peak Output Current | 5 A |
Power Switch | MOSFET,GaNFET |
Prop Delay | 30 ns |
Rating | Catalog |
Rise Time | 7 ns |
Eco Plan
RoHS | Compliant |
Design Kits & Evaluation Modules
- Evaluation Modules & Boards: LM5113LLPEVB
LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs Evaluation Module
Lifecycle Status: Active (Recommended for new designs) - Evaluation Modules & Boards: UCC27611OLEVM-203
UCC27611 Gate Driver Open Loop Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
Application Notes
- Design Considerations for LM5113 Advanced GaN FET Driver at High Frequency OperPDF, 572 Kb, File published: Sep 15, 2014
Design Considerations for LM5113 Advanced eGaN FET Driver at High Frequency Operation
Model Line
Series: LM5113 (5)
- LM5113SD/NOPB LM5113SDE/NOPB LM5113SDX/NOPB LM5113TME/NOPB LM5113TMX/NOPB
Manufacturer's Classification
- Semiconductors > Power Management > Gallium Nitride (GaN)В Solutions > GaN FET Drivers