Datasheet Texas Instruments LM5113SDE/NOPB

ManufacturerTexas Instruments
SeriesLM5113
Part NumberLM5113SDE/NOPB
Datasheet Texas Instruments LM5113SDE/NOPB

100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125

Datasheets

LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs datasheet
PDF, 2.4 Mb, Revision: G, File published: Oct 14, 2015
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Prices

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Packaging

Pin10
Package TypeDPR
Industry STD TermWSON
JEDEC CodeS-PDSO-N
Package QTY250
CarrierSMALL T&R
Device MarkingL5113
Width (mm)4
Length (mm)4
Thickness (mm).75
Pitch (mm).8
Max Height (mm).8
Mechanical DataDownload

Parametrics

Bus Voltage90 V
Driver ConfigurationDual,Independent
Fall Time3.5 ns
Input ThresholdTTL
Input VCC(Max)5.5 V
Input VCC(Min)4.5 V
Number of Channels2
Operating Temperature Range-40 to 125 C
Package GroupWSON
Package Size: mm2:W x LSee datasheet (WSON) PKG
Peak Output Current5 A
Power SwitchMOSFET,GaNFET
Prop Delay30 ns
RatingCatalog
Rise Time7 ns

Eco Plan

RoHSCompliant

Design Kits & Evaluation Modules

  • Evaluation Modules & Boards: LM5113LLPEVB
    LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)
  • Evaluation Modules & Boards: UCC27611OLEVM-203
    UCC27611 Gate Driver Open Loop Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)

Application Notes

  • Design Considerations for LM5113 Advanced GaN FET Driver at High Frequency Oper
    PDF, 572 Kb, File published: Sep 15, 2014
    Design Considerations for LM5113 Advanced eGaN FET Driver at High Frequency Operation

Model Line

Manufacturer's Classification

  • Semiconductors > Power Management > Gallium Nitride (GaN)В  Solutions > GaN FET Drivers