Datasheet International Rectifier IRF1010N

ManufacturerInternational Rectifier
SeriesIRF1010N
Part NumberIRF1010N

HEXFET Power MOSFET

Datasheets

Datasheet IRF1010N
PDF, 222 Kb, Language: en, File uploaded: Nov 23, 2022, Pages: 8
HEXFET Power MOSFET
Extract from the document

Prices

Detailed Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Manufacturer's Classification

  • Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single