IPD100N04S4-02 OptiMOSВ®-T2 Power-Transistor Product Summary
V DS 40 V R DS(on),max 2.0 mΩ ID 100 A Features N-channel -Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD100N04S4-02 PG-TO252-3-313 4N0402 Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Continuous drain current1) ID Conditions Value T C=25В°C, V GS=10V 100 T C=100В°C, V GS=10V2) 100 Unit
A Pulsed drain current2) I D,pulse T C=25В°C 400 Avalanche energy, single pulse2) E AS I D=50A 440 mJ Avalanche current, single pulse I AS -100 A Gate source voltage V GS -В±20 V Power dissipation P tot T C=25В°C 150 W Operating and storage temperature T j, T stg -55 . +175 В°C IEC climatic category; DIN IEC 68-1 -55/175/56 Rev. 1.0 page 1 2010-04-13 IPD100N04S4-02 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2)
Thermal resistance, junction -case R thJC -1.0 Thermal resistance, junction ambient, leaded R thJA -62 SMD version, device on PCB R thJA minimal footprint -62 6 cm2 cooling area3) -40 K/W Electrical characteristics, at T j=25 В°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 -Gate threshold voltage V GS(th) V DS=V GS, I D=95ВµA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V,
T j=25В°C -0.04 1 -1 20 V DS=18V, V GS=0V,
T j=85°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V -100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A -1.7 2.0 mΩ Rev. 1.0 page 2 2010-04-13 IPD100N04S4-02 Parameter Symbol Values Conditions Unit min. typ. max. -7250 9430 -1630 2120 Dynamic characteristics2)
Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss -55 127 Turn-on delay time t d(on) -23 -Rise time tr -12 -Turn-off delay time t d(off) -26 -Fall time tf -24 -Gate to source charge Q gs -39 51 Gate to drain charge Q gd -12 28 Gate charge total Qg -91 118 Gate plateau voltage V plateau -5.8 -V -100 A -400 V GS=0 V, V DS=25 V,
f =1 MHz V DD=20V, V GS=10V,
I D=100A, R G=3.5Ω pF ns Gate Charge Characteristics2) V DD=32V, I D=100A,
V GS=0 to 10V nC Reverse Diode
Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A,
T j=25В°C -0.9 1.3 V Reverse recovery time2) t rr V R=20V, I F=50A,
di F/dt =100A/Вµs -53 -ns Reverse recovery charge2) Q rr -65 -nC T C=25В°C 1) Current is limited by bondwire; with an R thJC = 1.0K/W the chip is …
