Datasheet IRF7313PBF - International Rectifier MOSFET, DUAL, NN, SO-8

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, DUAL, NN, SO-8

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Docket:
PD - 95039
IRF7313PbF
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Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET

Simulation Model

Specifications:

• Continuous Drain Current Id: 6.5 A
• Current Id Max: 6.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 29 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 10 V
• Row Pitch: 6.3 mm
• SMD Marking: 7313
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE932-01