Datasheet IRGB5B120KDPBF - International Rectifier SINGLE IGBT, 1.2KV, 12 A

Detailed Description

Manufacturer: International Rectifier

Description: SINGLE IGBT, 1.2KV, 12 A

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Docket:
PD - 94385F
IRGB5B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· · · · · · · Low VCE (on) Non Punch Through IGBT Technology.

Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-220 Package.

Simulation Model

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 12 A
• Collector Emitter Voltage, Vces: 1.2kV
• Power Dissipation, Pd: 89 W
• Collector Emitter Voltage, V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C to +150°C

RoHS: Yes